Fracture Behavior Characterization of Amorphous Hydrogenated Silicon Carbide via Thin‐Film Fracture Techniques

This report was done under the guidance of Yusuke Matsuda, PhD at Stanford University.

Two samples of amorphous hydrogenated silicon carbide (a-SiC:H) were subjected to micro-tensile testing in the di-cantilever beam configuration to investigate their fracture behavior. One sample was found to have a strain energy release rate 𝐺_c almost eight times larger than the other. The difference was suspected to be a result of energy absorption by plastic absorption. Material plasticity was found to be higher in the sample that yielded a higher 𝐺_c. Results here combined with characterization data from previous work showed that this phenomenon is most probably due to the presence of polymeric regions in the a-SiC:H structure. The improvement in fracture resistance due to this phenomenon may improve the success of a-SiC:H as an engineering material.

REPORT

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